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| P-CHANNEL 45V - 0.080 - 3A SO-8 STripFETTM MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET SCHOTTKY VDSS 45 V IF(AV) 3A RDS(on) < 0.11 VRRM 45 V ID 3A VF(MAX) 0.51 V STS3DPFS45 DESCRIPTION This product associates the latest low voltage StripFEToe in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. SO-8 INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Ptot Parameter Dain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Value 45 45 16 3 1.9 12 2 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Curren Average Forward Current Surge Non Repetitive Forward Current Repetitive Peak Reverse Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage TL=125 oC =0.5 tp= 10 ms Sinusoidal tp=2 s F=1 kHz tp=100 s Value 45 20 3 75 1 1 10000 Unit V A A A A A V/s (*) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed February 2002 . 1/8 STS3DPFS45 TERMAL DATA Rthj-amb Rthj-amb Tstg Tj Thermal Resistance Junction-ambient MOSFET Thermal Resistance Junction-ambient SCHOTTKY Storage Temperature Range Maximum Lead Temperature For Soldering Purpose MAX 62.5 100 -65 to 150 150 oC/W oC/W oC oC (*) Mounted on Fr-4 board (Steady State) ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 16 V Min. 45 1 10 100 Typ. Max. Unit V A A nA IGSS ON (1) Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS VGS = 10 V VGS = 10 V ID = 250 A ID = 1.5 A 3 Min. 2 Typ. 3 0.080 Max. 4 0.11 Unit V A SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS Symbol IR(*) VF(*) Parameter Reversed Leakage Current Forward Voltage drop Test Conditions TJ= 25 oC TJ= 125 oC TJ= 25 oC TJ= 125 oC VR= 45 V VR= 45 V IF= 3 A IF= 3 A Min. Typ. 0.03 0.42 Max. 0.2 100 0.51 0.46 Unit mA mA mA mA DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS>ID(on)xRDS(on)max ID=1.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 4 1190 200 56 Max. Unit S pF pF pF 2/8 STS3DPFS45 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 1.5 A VDD = 20 V RG = 4.7 VGS = 10 V (Resistive Load, Figure 3) VDD= 20V ID= 3A VGS=10V Min. Typ. 20 25 24.5 4 5.5 33 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf td(off) tf tc Parameter Turn-off Delay Time Fall Time Turn-off Delay Time Fall Time Cross-over Time Test Conditions ID = 1.5 A VDD = 20 V RG = 4.7, VGS = 10 V (Resistive Load, Figure 3) Vclamp = 32 V RG = 4.7, ID = 3 A VGS = 10 V Min. Typ. 100 22 95 11 35 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A VGS = 0 40 85 3.8 Test Conditions Min. Typ. Max. 3 12 2 Unit A A V ns nC A di/dt = 100A/s ISD = 3 A VDD = 15 V Tj = 150C (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS3DPFS45 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS3DPFS45 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics . . . 5/8 STS3DPFS45 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS3DPFS45 SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 7/8 STS3DPFS45 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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